郑州大学马壮壮、史志锋、单崇新&南京工业大学王建浦等人Nat. Commun.: 高效非铅金属卤化物LED

一、成果简介

溶液加工发光二极管（LED）因制备工艺简单、成本低廉、易于大面积制造，被认为是下一代显示与照明技术的重要发展方向。近年来，基于有机发光材料、量子点、钙钛矿以及有机–无机杂化材料的溶液加工LED取得了快速发展。其中，有机–无机杂化金属卤化物由于同时具备无机半导体优良的电学特性和有机组分丰富的结构可设计性，在新型高效发光材料领域受到广泛关注。尤其是零维杂化锑卤化物，由于具有分子尺度的量子限域结构，展现出接近100%的光致荧光量子产率和良好的稳定性，被视为极具潜力的发光体系。然而，迄今报道的锑卤化物LED外量子效率仍普遍低于6%，存在“高光致发光、低电致发光”的显著差距，表明器件中电荷传输、注入及界面复合过程仍是限制性能提升的关键瓶颈。

针对上述问题，科研团队从分子层面出发，提出一种全新的有机阳离子设计策略，构建了咔唑功能化的有机阳离子。该阳离子一方面能够与无机卤化物框架和溶剂分子形成强氢键相互作用，有效调控薄膜结晶动力学，从而获得致密、均匀、低缺陷密度的高质量发光层；另一方面，其咔唑单元可与电子传输层中的苯并咪唑结构产生显著的π-π堆积作用，改善界面能级匹配和分子耦合，促进电子在界面处的高效传输与注入。在材料发光性能提升与界面工程优化的协同作用下，研究团队成功制备出高性能锑卤化物LED器件，最大外量子效率达到19.4%，工作半衰期达到10190分钟，较以往报道水平实现了跨越式提升。这一成果不仅大幅缩小了光致发光效率与电致发光效率之间的差距，也为有机无机杂化金属卤化物在高效、稳定LED中的应用奠定了重要基础。

二、图文导读

Fig. 1 | Design concept and EL performance of Sb halide LEDs. Schematic diagram of device structure based on control (TPPEt)₂SbBr₅ (a) and target (TPPEtCz)2Sb2Br8 (b) emitters, highlighting the chemical structures of organic cation. c Electrostatic surface potential of (TPPEt)₂SbBr_5, TPBi, and (TPPEtCz)₂Sb₂Br₈, highlighting the interfacial interaction between emitters and TPBi. Current density−voltage−luminance curves (d) and EQE−current density curves (e) of (TPPEt)₂SbBr₅ and (TPPEtCz)₂Sb₂Br₈-based LEDs. f Maximum EQE of state-of-the-art lead-free metal halide LEDs (Supplementary Table 3 for details). g Statistical maximum EQE histograms of (TPPEt)₂SbBr₅ and (TPPEtCz)₂Sb₂Br₈-based LEDs. h Half-lifetime measurement of two LEDs.

Fig. 2 | Electronic structure, optical, and morphological characteristics of Sb halide films.a−d pDOS diagrams of (TPPEt)₂SbBr₅(a) and (TPPEtCz)₂Sb₂Br₈ (c) with emphasizing the charge density plots for VBM and CBM, respectively. Illustration of the energy level alignments of (TPPEt)₂SbBr₅ (b) and (TPPEtCz)₂Sb₂Br₈ (d), including the evolution of exciton formation, transfer, and radiative recombination processes. e−g UV-visible absorption and PL spectra (e), PLQY (f), pseudo color mapping of time-resolved PL spectra (g) of two films. In-situ PL spectra(h) of two films during the spin-coating process, with the PL intensity evolution (i) extracted from the in-situ PL spectra. j AFM images of two films. Scale bars: 1 µm. k GIWAXS patterns of two films.

Fig. 3 | Influence of π−π interaction on charge transport. a KPFM images of (TPPEtCz)₂Sb₂Br₈ and TPBi-treated (TPPEtCz)₂Sb₂Br₈ films. Scale bars: 1 µm. b EIS curves of devices based on (TPPEt)₂SbBr₅and (TPPEtCz)₂Sb₂Br₈ films. c Low-frequency (f= 5 kHz) C–V curves of two LEDs. d–f N 1s fine spectra (d), FTIR spectra (e), and ¹H NMR spectra (f) of pure TPBi, TPBi-treated (TPPEtCz)₂Sb₂Br₈, and pure (TPPEtCz)₂Sb₂Br₈. g Three adsorption model structures of TPBi and (TPPEtCz)₂Sb₂Br₈. h Comparison of adsorption energies (E_ads) of the three adsorption models.

Fig. 4 | Demonstration of large-area devices. a PL photograph of large-area (TPPEtCz)₂Sb₂Br₈films with an emitting area of 4.5 × 4.5 cm² under UV light irradiation. b PL intensity distribution of large-area films. c Photograph of a large-area LED with an emitting area of 3.5 × 3.5 cm² under a bias voltage of 8.0 V. d Luminance uniformity statistics of the large-area LEDs. Current density−voltage−luminance (e) and EQE−current density (f) curves of large-area LEDs

三、论文信息

Nature Communications

Efficient solution-processed light-emitting diodes based on organic-inorganic hybrid antimony halides

Zhuangzhuang Ma1#, Weihong Chu1#, Qiming Peng2#, Qicong Zhou1, Xinzhen Ji1, Shuailing Lin1, Jingmin Wang2, Xiuyong Li2, Meng Wang1, Mengyao Zhang1, Dongyang Zhu1, Zhenghao Xia1, Niannian Wang1, Dongwen Yang1, Ying Liu1, Yanbing Han1, Linyuan Lian1, Mochen Jia1, Xu Chen1, Jibin Zhang1, Di Wu1, Xinjian Li1, Chongxin Shan1*, Jianpu Wang2,3*, and Zhifeng Shi1*

First published: 17 January 2026

Ma, Z., Chu, W., Peng, Q. et al. Efficient solution-processed light-emitting diodes based on organic-inorganic hybrid antimony halides. Nat. Commun. (2026).

https://doi.org/10.1038/s41467-026-68597-9